Copolymers containing 3-hydroxycyclohexyl methacrylate (HCMA) were synthesized as a base polymer for At-F excimer law lithography. The dry-etching rates of these polymers for CF4 CHF3 mixed gas were 1.1-1.2 times that of a novolac-based resist. The aclhcsion properties of the polymers were also studied by estimating the work of adhesion. When the content of the HCMA unit in the polymer cucccds 60 mol%, the work of adhesion of the resist is similar to those of polyvinylphenol (PVP)-based photoresists. A 0.19 pm pattern protile was obtained using a resist based on the terpolymer containing HCMA and the conventional developer, 2.38 wt% tetrarnethylammonium hydroxide (TMAH) aqueous solution.
Посилання на статтю:
Synthesis of copolymers containing 3-hydroxycyclohexyl methacrylate and their application as ArF excimer laser resists / Jin-Baek Kim, Jae-Young Kim, Min-Ho Jung // Polymer. – 1999. – N 40. – P. 273–276.