Poly(2-trimethylsilyl-2-propyl methacrylate) was synthesized and evaluated as a potential dry-developable chemically amplified photoresist. The deprotection of 2-trimethylsilyl-2-propyl group of the polymer takes place in the exposed region after post-exposure bake. The difference of silicon content between the unexposed region and exposed regions is large enough to form patterns using oxygen reactive-ion etching. The etching selectivity of the unexposed region to the exposed region was 142.
Посилання на статтю:
Polymer Communications Synthesis of poly(2-trimethylsilyl-2-propyl methacrylate) and their application as a dry-developable chemically amplified photoresist / Jin-Baek Kim, Hyunwoo Kim, Jae-Hak Choi // Polymer. – 1999. – N 40. – P. 1617–1621.