Poly(2-trimethylsilyl-2-propyl methacrylate-co- g -butyrolactone-2-yl methacrylate) was synthesized and evaluated as a chemically amplified resist for ArF lithography. The polymer has excellent transmittance at 248 nm and also has a good transmittance at 193 nm. In addition, the polymer possesses good thermal stability up to 2008C, whereas in the presence of an acid the cleavage of the 2-trimethylsilyl-2-propyl ester group begins at about 808C in a catalytic manner. Patterns of 0.24 mm line/space were obtained with a conventional developer, 2.38 wt.% tetramethylammonium hydroxide aqueous solution, using an ArF excimer laser exposure system.
Посилання на статтю:
Polymer Communication Poly(2-trimethylsilyl-2-propyl methacrylate-co- g -butyrolactone-2-yl methacrylate) for ArF lithography / J.-B. Kim, H. Kim, S.-H. Lee, J.-T. Moon // Polymer. – 1999. – N 40. – P. 5213–5217.